Method of erasing data with improving reliability in a...

Details Method of erasing data with improving reliability in a... Method of erasing data with improving reliability in a...

2006-10-11

2008-07-22

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240

Reexamination Certificate

active

07403429

ABSTRACT:
A method of erasing data in a nonvolatile semiconductor memory device including applying an erase voltage to a substrate of the semiconductor memory device, applying a ground voltage to wordlines of a selected memory cell string formed in the substrate, and applying a control voltage to at least one of a string selection line and a ground selection line of the selected memory cell string.

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English language abstract for Korea Publication No. 10-0190089.
English language abstract for Korea Publication No. 10-0204804.
English language abstract for Korea Publication No. 2002-0042756.

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