Highly-corrected mask

Details Highly-corrected mask Highly-corrected mask

2005-11-02

2008-09-16

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07425391

ABSTRACT:
The present invention discloses a pattern-distributed mask. It comprises a plurality of mask regions whose images will be merged into a single image (e.g. by interleaving) on an image-carrier (e.g. wafer, mask blank). The pattern spacing on a pattern-distributed mask could be much larger than a conventional mask. For example, all pattern spacing on a pattern-distributed mask could be ˜3F (vs. ˜1F on a conventional mask). It can enable highly-corrected mask, as well as thin-film mask with supporting structures.

REFERENCES:
patent: 5415835 (1995-05-01), Brueck et al.
patent: 6042998 (2000-03-01), Brueck et al.
Brueck, “Optical and Interferometric Lithography—Nanotechnology Enablers”,Proceedings of the IEEE, vol. 93, No. 10, Oct. 2005.

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