Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

2006-10-17

2008-07-01

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Heterojunction formed between semiconductor materials which...

C257S183000, C257S201000, C257S615000, C257SE33049

Reexamination Certificate

active

07394114

ABSTRACT:
A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.

REFERENCES:
patent: 5153889 (1992-10-01), Sugawara et al.
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5859864 (1999-01-01), Jewell
patent: 6849881 (2005-02-01), Harle et al.
patent: 7049212 (2006-05-01), Nakamura et al.
patent: 7208774 (2007-04-01), Hashimoto et al.
patent: 7235816 (2007-06-01), Takahashi et al.
patent: 2002/0171091 (2002-11-01), Goetz et al.
patent: 2005/0127397 (2005-06-01), Borges et al.
patent: 2005/0285127 (2005-12-01), Noto et al.
patent: 2006/0091421 (2006-05-01), Ono et al.
patent: 2006/0118914 (2006-06-01), Yoo
patent: 2000-91707 (2000-03-01), None
T. Nittono et al.; “Photoluminescence characterization of InGaP/GaAs heterostructures grown by metalorganic chemical vapor deposition”,J. of Applied Physics, vol. 78, No. 9 (Nov. 1, 1995) pp. 5387-5390.
D. P. Bour, et al.; “Ga0.5In0.5P/GaAs interfaces by organometallic vapor-phase epitaxy”,J. of Applied Physics, vol. 63, No. 4, (Feb. 15, 1988), pp. 1241-1243.

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