Apparatus, precursors and deposition methods for...

Coating processes – With post-treatment of coating or coating material – Heating or drying

Reexamination Certificate

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C427S096100, C427S097600, C427S255180, C427S255280, C427S255370, C427S373000

Reexamination Certificate

active

07425350

ABSTRACT:
A method for making a Si-containing material comprises transporting a pyrolyzed Si-precursor to a substrate and polymerizing the pyrolyzed Si-precursor on the substrate to form a Si-containing film. Polymerization of the pyrolyzed Si-precursor may be carried out in the presence of a porogen to thereby form a porogen-containing Si-containing film. The porogen may be removed from the porogen-containing Si-containing film to thereby form a porous Si-containing film. Preferred porous Si-containing films have low dielectric constants and thus are suitable for various low-k applications such as in microelectronics and microelectromechanical systems.

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