Signal and/or ground planes with double buried insulator...

Details Signal and/or ground planes with double buried insulator... Signal and/or ground planes with double buried insulator...

2005-04-29

2008-01-29

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S151000, C438S164000, C438S459000, C438S479000, C438S682000, C257SE21567

Reexamination Certificate

active

07323396

ABSTRACT:
The present invention describes a method including the steps of providing a single crystal semiconductor substrate, forming a layer of rare earth silicide on a surface of the semiconductor substrate, forming a first layer of insulating material on the layer of rare earth silicide, forming a layer of electrically conductive material on the first layer of insulating material, and forming a second layer of insulating material on the layer of electrically conductive material. In one embodiment the step of forming the layer of rare earth silicide includes depositing a layer of rare earth metal on a surface of the semiconductor substrate depositing a layer of insulating material on the layer of rare earth metal, and annealing the structure to form a layer of rare earth silicide in conjunction with the surface of the semiconductor substrate and a rare earth doped insulating layer in conjunction with the layer of insulating material.

REFERENCES:
patent: 5387555 (1995-02-01), Linn et al.
patent: 5798297 (1998-08-01), Winnerl et al.
patent: 2002/0151158 (2002-10-01), Cabral et al.

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