Formation of semiconductor diamond

Details Formation of semiconductor diamond Formation of semiconductor diamond

Filed on

1992-07-24

Date issued

1994-07-12

Examiner

Kunemund, Robert

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437174, 423446, H01L 21265, H01L 21268

Type

Patent

Status

active

Patent number

053288556

Description

ABSTRACT:
Semiconductor diamond is formed by a process comprising irradiating diamond crystal with light having irradiation density of more than 0.1 W/cm.sup.2, annihilating defects in the diamond crystals, and cleaning the surface of the diamond crystals.

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patent: 5066515 (1991-11-01), Ohsawa
patent: 5114871 (1992-05-01), Jones
patent: 5176788 (1993-01-01), Kabacoff et al.
Prins, Johan F., "Activation of boron-dopant atoms in ion-implanted diamonds", Physical Review B, at pp. 5576-5584 (1988) month unknown.
Prins & Gaigher, "A Ten Study of Layers Grown on Copper Using Carbon-Ion-Implantation", New Diamond Science and Technology, at pp. 561-566 (1991).
Sandhu, Swanson and Chu, "Doping of diamond by coimplantation of carbon and boron", App. Phys. Lett. 55 (14), at pp. 1397-1399 (1989) month unknown.
Sandhu, Kao and Swanson, "Doping of Diamond by Co-Implantation With Dopant Atoms and Carbon", Mat. Res. Soc. Symp. Proc., vol. 162, at pp. 321-326 (1990) month unknown.
Sandhu, Liu, Parikh, Hunn & Swanson, "Regrowth of Damaged Layers in Diamond Produced By Ion Implantation", Mat. Res. Soc. Symp. Proc., vol. 162, pp. 189-194 (1990) month unknown.
Lee, Brosious and Corbett, "High-Temperature Ion Implantation in Diamond", Phys. Stat. Sol., vol. 50, at pp. 237-242 (1978) month unknown.

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