Trench widening without merging

Details Trench widening without merging Trench widening without merging

2008-05-20

2008-05-20

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C438S386000, C257SE29004

Reexamination Certificate

active

11420527

ABSTRACT:
A semiconductor fabrication method comprises steps of providing a semiconductor structure. The semiconductor structure includes a semiconductor substrate, a trench in the semiconductor substrate. The trench comprises a side wall which includes {100} side wall surfaces and {110} side wall surfaces. The semiconductor structure further includes a blocking layer on the {100} side wall surfaces and the {110} side wall surfaces. The method further comprises the steps of removing portions of the blocking layer on the {110} side wall surfaces without removing portions of the blocking layer on the {100} side wall surfaces such that the {110} side wall surfaces are exposed to a surrounding ambient.

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