Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-01-08
2008-01-08
Erdem, Fazli (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE27111, C257SE29151, C369S043000
Reexamination Certificate
active
10766564
ABSTRACT:
Provided is a structure for conductive members in a TFT display. The structure is aluminum based and is heat treated. When heat treated, no hillocks are formed because of the presence of a titanium layer. Furthermore, TiAl3is not formed because of the presence of a TiN diffusion layer between the aluminum and the Ti layers. This novel structure has a low resistivity and is therefore suited for large displays that use thin film transistors to drive the pixels.
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Bushnell , Esq. Robert E.
Erdem Fazli
Samsung SDI & Co., Ltd.
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