Non-volatile memory device

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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Details

C365S185050, C365S185110, C365S185130

Reexamination Certificate

active

11420367

ABSTRACT:
A non-volatile memory device may include a plurality of memory blocks including memory cells connected in series to bit lines, respectively. Each of the plurality of memory blocks may include a first sub memory block having a first group of memory cells, which are respectively connected in series between first select transistors connected to the bit lines, respectively, and second select transistors connected to a common source line, and a second sub memory block having a second group of memory cells, which are respectively connected in series between third select transistors connected to the bit lines, respectively, and fourth select transistors connected to the common source line.

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