Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-07-08
2008-07-08
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S292000, C257S444000, C257SE31053, C257SE31067
Reexamination Certificate
active
11195133
ABSTRACT:
An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current.
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Mandala Jr. Victor A.
Pert Evan
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