Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-09-02
2008-09-02
Le, Vu A (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180
Reexamination Certificate
active
11512325
ABSTRACT:
A non-volatile semiconductor memory device including a NAND cell unit with a plurality of electrically rewritable and non-volatile memory cells connected in series, a source line coupled to one end of the NAND cell unit, and a bit line coupled to the other end of the NAND cell unit, wherein the NAND cell unit is biased in a data write mode as follows: a write voltage Vpgm is applied to a control gate of a selected memory cell in the NAND cell unit; a channel-isolating voltage is applied to control gates of non-selected memory cells disposed on the source line side of the selected memory cell at intervals of a certain number of memory cells; and a write medium voltage Vm lower than Vpgm is applied to control gates of the remaining non-selected memory cells.
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Kabushiki Kaisha Toshiba
Le Vu A
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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