Bonding and probing pad structures

Details Bonding and probing pad structures Bonding and probing pad structures

2008-07-08

2008-07-08

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S779000, C257S780000, C257S786000, C257SE23020

Reexamination Certificate

active

11539498

ABSTRACT:
A pad structure includes a first metal-containing layer formed over a substrate. A first passivation layer is formed over the first metal-containing layer. The first passivation layer has a first opening partially exposing the first metal-containing layer. A pad layer is formed over the first passivation layer, covering the first opening. The pad layer includes a probing region configured to be contacted by a probe and a bonding region configured to have a wired bonded to it. The probing region contacts the first metal-containing layer through the first opening, and the bonding region overlies a portion of the first passivation layer.

REFERENCES:
patent: 6614091 (2003-09-01), Downey
patent: 2003/0173667 (2003-09-01), Yong et al.

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