Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2008-05-06
2008-05-06
Lindsay, Jr., Walter (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C438S270000, C257SE21429, C257SE29135
Reexamination Certificate
active
11184801
ABSTRACT:
A metal oxide semiconductor (MOS) transistor having a recessed gate electrode and a fabrication method thereof are provided. The MOS transistor includes a semiconductor substrate and an isolation layer formed in a predetermined region of the semiconductor substrate to define an active region. A channel trench region is disposed within the active region to cross the active region. A gate insulating layer is disposed to cover sidewalls and a bottom of the channel trench region. The MOS transistor has a gate pattern that fills the channel trench region and crosses above the active region. A portion of the sidewall of the gate pattern is recessed at an upper corner of the channel trench region and has a width smaller than the width of the top of the gate pattern and smaller than the width of the channel trench region.
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Lee & Morse P.C.
Lindsay, Jr. Walter
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