Method of fabricating semiconductor devices and method of...

Details Method of fabricating semiconductor devices and method of... Method of fabricating semiconductor devices and method of...

2008-03-04

2008-03-04

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S687000, C438S757000, C257SE21251

Reexamination Certificate

active

11162952

ABSTRACT:
A method of fabricating a semiconductor device is disclosed. The method includes defining an electrode on a semiconductor substrate; forming a spacer on at least one sidewall of the electrode; performing a process operation on the semiconductor substrate using the spacer as a mask and forming a material layer on the top or the surface of the semiconductor substrate and the electrode; and removing the spacer by steps of performing a wet etching process at a temperature in a range of 100° C. to 150° C. to etch the spacer using an acid solution containing phosphoric acid as an etchant. With respect to another aspect, a method of removing a spacer is also disclosed. The method includes performing a wet etching process at a temperature in a range of 100° C. to 150° C. to etch the spacer using an acid solution containing phosphoric acid as an etchant.

REFERENCES:
patent: 2005/0253204 (2005-11-01), Chan et al.
patent: 2006/0046401 (2006-03-01), Kavalieros et al.

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