Circuit device manufacturing method

Details Circuit device manufacturing method Circuit device manufacturing method

2008-04-29

2008-04-29

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S612000, C257S678000, C257S686000, C257S690000

Reexamination Certificate

active

11207293

ABSTRACT:
A circuit device manufacturing method is provided, wherein the adhesion of an overcoat resin, formed on a conductive wiring layer, to a sealing resin layer is improved by irradiating plasma onto the overcoat resin. A first conductive film23A and a second conductive film23B, which are laminated with an interlayer insulating layer22interposed in between, are formed. By selectively removing the first conductive film, a first conductive wiring layer12A is formed and the first conductive wiring layer is covered with an overcoat resin18. Overcoat resin18is irradiated with plasma to roughen its top surface. A sealing resin layer17is formed so as to cover the top surface of the roughened overcoat resin18and circuit elements13.

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