Method of manufacturing ferroelectric semiconductor device

Details Method of manufacturing ferroelectric semiconductor device Method of manufacturing ferroelectric semiconductor device

2008-05-06

2008-05-06

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C257SE27104, C257SE21208, C257SE21663, C257SE21664

Reexamination Certificate

active

10835436

ABSTRACT:
An Ir film, an IrOxfilm, a Pt film, a PtO film and a Pt film are formed, and thereafter a PLZT film is formed. Then, heat treatment at 600° C. or lower is performed by the RTA method in an atmosphere containing Ar and O2to thereby crystallize the PLZT film. Subsequently, an IrOxfilm and an IrO2film are formed. Then, these films are patterned at once. Thereafter, an alumina film is formed as a protective film. Subsequently, heat treatment at 650° C. for 60 minutes in an oxygen atmosphere is performed as recovery annealing. Note that no heat treatment is performed from the crystallization of the PLZT film to the recovery annealing.

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