Semiconductor device including titanium wires and...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S763000

Reexamination Certificate

active

10079591

ABSTRACT:
A first insulating film consisting of an insulating material is formed on a major surface of a semiconductor substrate. On the first insulating film, a wire comprising a first conductive layer, which contains one of elemental Ti and a Ti compound, is formed. Cover films consisting of silicon nitride cover the upper surface, the bottom surface, and the side surfaces of the wire having a multilayer structure. Accordingly, a semiconductor device in which insulation defects are unlikely to occur even when the degree of integration is increased can be provided.

REFERENCES:
patent: 4517729 (1985-05-01), Batra
patent: 5372969 (1994-12-01), Moslehi
patent: 5612254 (1997-03-01), Mu et al.
patent: 5612557 (1997-03-01), Kondo et al.
patent: 5739579 (1998-04-01), Chiang et al.
patent: 6028360 (2000-02-01), Nakamura et al.
patent: 6383870 (2002-05-01), San et al.
patent: 6440807 (2002-08-01), Ajmera et al.
patent: 6479873 (2002-11-01), Yoshiyama et al.
patent: 2004/0094793 (2004-05-01), Noguchi et al.
patent: 11-87652 (1999-03-01), None
patent: 11-87652 (1999-03-01), None

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