Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-05-13
2008-05-13
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S763000
Reexamination Certificate
active
10079591
ABSTRACT:
A first insulating film consisting of an insulating material is formed on a major surface of a semiconductor substrate. On the first insulating film, a wire comprising a first conductive layer, which contains one of elemental Ti and a Ti compound, is formed. Cover films consisting of silicon nitride cover the upper surface, the bottom surface, and the side surfaces of the wire having a multilayer structure. Accordingly, a semiconductor device in which insulation defects are unlikely to occur even when the degree of integration is increased can be provided.
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Ikemasu Shinichiroh
Yoshizawa Kazutaka
Clark S. V.
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
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