Solid-state image-sensing device

Details Solid-state image-sensing device Solid-state image-sensing device

2008-07-15

2008-07-15

Epps, Georgia Y. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S2140RC, C257S292000, C348S308000

Reexamination Certificate

active

11392982

ABSTRACT:
In a solid-state image-sensing device, by global shuttering, whereby image sensing is performed simultaneously in all the pixels, a potential commensurate with the amount of light incident on a buried diode PD is held in an N-type floating diffusion region FD. Then a noise signal is outputted, and then the potential held in the N-type floating diffusion region FD is transferred to an N-type floating diffusion region FD1so that an image signal is outputted.

REFERENCES:
patent: 6784015 (2004-08-01), Hatano et al.
patent: 2004/0218078 (2004-11-01), Lee
patent: 11-313257 (1999-11-01), None
patent: 2002-77733 (2002-03-01), None
patent: 2002-300476 (2002-10-01), None

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