Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Reexamination Certificate
2008-04-29
2008-04-29
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
C438S431000, C257SE29297
Reexamination Certificate
active
11269543
ABSTRACT:
According to one aspect of the invention, there is provided a semiconductor device fabrication method comprising:forming a gate insulating film on a semiconductor substrate;forming a film containing a predetermined semiconductor material and germanium on the gate insulating film;oxidizing the film to form a first film having a germanium concentration higher than that of the film and a film thickness smaller than that of the film on the gate insulating film, and form an oxide film on the first film;removing the oxide film;forming, on the first film, a second film containing the semiconductor material and having a germanium concentration lower than that of the first film;forming a gate electrode by etching the second and first films; andforming a source region and drain region by ion-implanting a predetermined impurity by using the gate electrode as a mask.
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Coleman W. David
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
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