Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-04-29

2008-04-29

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Gettering of substrate

C438S758000, C438S928000, C257SE21318

Reexamination Certificate

active

11034981

ABSTRACT:
In a method of forming a semiconductor device, a copper diffusion-prevention layer is formed underneath a substrate. Impurity regions are formed on the surface of the substrate. A copper wiring is electrically connected to the impurity regions. The copper diffusion-prevention layer is formed before forming the lightly doped source/drain regions to prevent copper atoms from diffusing into the substrate.

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