Composition for forming porous film, porous film and method...

Details Composition for forming porous film, porous film and method... Composition for forming porous film, porous film and method...

2008-04-15

2008-04-15

Zimmer, Marc S. (Department: 1796)

Coating processes

With post-treatment of coating or coating material

Heating or drying

C427S373000, C528S021000

Reexamination Certificate

active

10819544

ABSTRACT:
Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2):in-line-formulae description="In-line Formulae" end="lead"?(R1)aSi(R2)4-a  (1)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?(R3)b(R5)3-bSi—R7—Si(R6)3-c(R4)c  (2)in-line-formulae description="In-line Formulae" end="tail"?wherein R1, R3and R4each independently represents a monovalent hydrocarbon group which may have a substituent; R2, R5and R6each independently represents a hydrolyzable group; R7represents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.

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