Method of producing sheets of crystalline material and devices m

Details Method of producing sheets of crystalline material and devices m Method of producing sheets of crystalline material and devices m

1992-03-03

1994-07-12

Kunemund, Robert

Fishing, trapping, and vermin destroying

437946, 437962, 437968, C30B 2504

Patent

active

053285492

ABSTRACT:
A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.

REFERENCES:
patent: 2992903 (1961-07-01), Imber
patent: 3031275 (1962-04-01), Shockley
patent: 3112997 (1963-12-01), Bezring et al.
patent: 3133336 (1964-05-01), Marinace
patent: 3172778 (1965-03-01), Gunther et al.
patent: 3186880 (1965-06-01), Skaggs et al.
patent: 3247576 (1966-04-01), Dill et al.
patent: 3290181 (1966-12-01), Sirtl
patent: 3336159 (1967-08-01), Liebson
patent: 3341376 (1967-09-01), Sperke et al.
patent: 3370980 (1968-02-01), Anderson
patent: 3372069 (1968-03-01), Bailey et al.
patent: 3425879 (1969-02-01), Shaw et al.
patent: 3634150 (1972-01-01), Horn
patent: 3816906 (1974-06-01), Falckenberg
patent: 3884733 (1975-05-01), Bean
patent: 3900943 (1975-08-01), Sirtl et al.
patent: 3911559 (1975-10-01), Bean et al.
patent: 4027053 (1977-05-01), Lesk
patent: 4046618 (1977-09-01), Chaudhari et al.
patent: 4053350 (1977-10-01), Olsen et al.
patent: 4116751 (1978-09-01), Zarcomb
patent: 4168998 (1979-09-01), Hasegawa et al.
patent: 4381201 (1983-04-01), Sakurai
patent: 4445965 (1984-05-01), Milnes
Japanese Journal of Applied Physics: "Si Bridging Epitaxy from Si Windows onto SiO.sub.2 by Q-Switched Ruby Laser Pulse Annealing," by Tamura, vol. 19, No. 1, (1980) pp. L23-26.
IEEE Photovoltaic Specialist Conf.: "Peeled Film Technology for Solar Cells", A. G. Milnes, D. L. Feucht, 1975, pp. 338-341.
Journal of the Electrochemical Society: "Selective Epitaxial Deposition of Gallium Arsenide in Holes", Don W. Shaw, Sep. 1966, pp. 904-909.
Solar Energy: Review Paper: "Solar Cells for Terrestrial Applications", Harold J. Hovel, vol. 19, 1977, pp. 605-615.
Abstract No. 224: "Thin Film GaAlAs-GaAs Solar Cells by Peeled Film Technology", by Makoto Konagai & Kiyoshi Takahasi, pp. 554-555, date unknown.
F. W. Tausch, Jr. & A. G. Lapierre, III; "A Novel Crystal Growth Phenomenon: Single Crystal GaAs Overgrowth onto Silicon Dioxide", Journal of the Electrochemical Society; vol. 112, No. 7, Jul. 1965; pp. 706-709.
Applied Physics Letters; "Lateral Epitaxy by Seeded Solidification for Growth of Single-Crystal Si Films on Insulators"; by Fan et al vol. 38, No. 5, Mar. 1, 1981; pp. 365-367.
IEEE Photovoltaic Specialist Conf.: "A Nonconventional Approach to Thin Film Cell Fabrication", Kirkpatrick et al., Jun. 5-8, 1978 pp. 1342-1346.
IBM Technical Disclosure Bulletin; "Producing Semiconductor Devices by Oriented Lateral Overgrowth", by W. Von Muench, vol. 10, No. 10, Mar. 1968; pp. 1469-1470.

Affiliated with

Also associated with

Rating

Method of producing sheets of crystalline material and devices m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing sheets of crystalline material and devices m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing sheets of crystalline material and devices m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-393568