Method of synthesizing single diamond crystals of high thermal c

Details Method of synthesizing single diamond crystals of high thermal c Method of synthesizing single diamond crystals of high thermal c

1992-12-23

1994-07-12

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

423446, 117929, C30B 2904

Patent

active

053285484

ABSTRACT:
A method of synthesizing single diamond crystals using a carbon source containing at least 99.9 atomic % carbon-12. This is accomplished by graphitizing carbon-12 to form a highly crystalline material which can be used as a carbon source in an ultra high pressure creating apparatus to produce single diamond crystals by means of a temperature difference process.

REFERENCES:
patent: 3895313 (1975-07-01), Seitz
patent: 4547257 (1985-10-01), Iizuka et al.
patent: 4849199 (1989-07-01), Pinneo
patent: 4927619 (1990-05-01), Tsuji
R. Berman et al., "The thermal conductivity of diamonds", Diamond Research, 1976, pp. 7-13.
"Vapor Growth Diamond on Diamond and Other Surfaces"; Spitsyn et al.; Journal of Crystal Growth 52 (1981) pp. 219-226.

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