Multi-layer gate structure

Details Multi-layer gate structure Multi-layer gate structure

1996-02-26

1997-06-03

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257769, 257770, H01L 2348, H01L 2352, H01L 2940

Patent

active

056357656

ABSTRACT:
A method of forming a multi-layer silicide gate structure for a MOS type semiconductor device that includes the processing steps of first providing a substrate, then depositing a gate oxide layer on the substrate, then depositing a first refractory metal silicide layer which has a first stoichometry on the gate oxide layer, and finally depositing a second refractory metal silicide layer which has a second stoichometry different than the first stoichometry on the first deposited refractory metal silicide layer.

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