Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2008-01-29
2008-01-29
Doan, Theresa T. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S563000, C257S564000, C257SE29114, C257SE29115, C257SE27009, C331S17700V, C331S1170FE
Reexamination Certificate
active
11175378
ABSTRACT:
A semiconductor device having an improved voltage control oscillator circuit is provided. The voltage control oscillator circuit includes, in combination, a variable-capacitance element and at least one bipolar transistor on a single semiconductor substrate. The variable-capacitance element includes reversely serially connected PN junctions, and junctions are formed by a single common collector layer and separated base layers on the common collector layer. The capacitance of the variable-capacitance element is generated between respective base layers of the PN junctions with the common collector layer, and varies in correspondence with the voltage applied to the common collector layer.
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Chomei Kenichiro
Matsuzuka Takayuki
Suzuki Satoshi
Doan Theresa T.
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
Salerno Sarah K
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