Thin film transistor liquid crystal display and...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S059000, C257S072000, C257S347000

Reexamination Certificate

active

10663025

ABSTRACT:
A manufacturing method and the structure of a thin film transistor liquid crystal display (TFT-LCD) are disclosed. The TFT-LCD uses metal electrodes as a mask to thoroughly remove the unwanted semiconductor layer during the etching process for forming the source and drain electrodes. This manufacturing method can reduce the problems caused by the unwanted semiconductor layer, hence improving the quality of the TFT.

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patent: 6297161 (2001-10-01), Sah
patent: 6433842 (2002-08-01), Kaneko et al.

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