Retrograde trench isolation structures

Details Retrograde trench isolation structures Retrograde trench isolation structures

2008-03-04

2008-03-04

Gebremariam, Samuel A. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S510000, C257S506000, C257S501000

Reexamination Certificate

active

10919546

ABSTRACT:
Methods are provided for making retrograde trench isolation structures with improved electrical insulation properties. One method comprises the steps of: forming a retrograde trench in a silicon substrate, and forming a layer of silicon oxide on the walls of the trench by thermal oxidation, such that the trench is sealed and a space is formed within the layer of silicon oxide. The space can contain a vacuum or any of a variety of gases depending upon conditions of the thermal oxidation step. Retrograde trench isolation structures containing a space are also provided.

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