Planar magnetron sputtering with modified field configuration

Details Planar magnetron sputtering with modified field configuration Planar magnetron sputtering with modified field configuration

1984-12-18

1986-08-19

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, C23C 1500

Patent

active

046068023

ABSTRACT:
Planar magnetron sputtering sputters a target formed of plural target members from their principal surface. The plural target members are arranged on an electrode. The sputtering is carried out in such a condition that an electric field and magnetic field are substantially parallel in their direction at the boundary regions among the plural target members.

REFERENCES:
patent: 4401539 (1983-08-01), Abe
patent: 4404077 (1983-09-01), Fournier
patent: 4431505 (1984-02-01), Morrison, Jr.
patent: 4444635 (1984-04-01), Kobayashi

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