Projection exposure apparatus

Photocopying – Projection printing and copying cameras – Step and repeat

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355 67, G03B 2742, G03B 2754

Patent

active

049774263

ABSTRACT:
A projection exposure apparatus for projecting, through a refracting optical system, a pattern formed on an original such as a mask or reticle onto a wafer. The projection exposure apparatus includes a light source for providing an excimer laser beam to illuminate the original. The refracting optical system includes a plurality of lenses each of which is made of fused silica (SiO.sub.2) or calcium fluoride (CaF.sub.2).

REFERENCES:
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patent: 4132479 (1979-01-01), Dubroeucq et al.
patent: 4461546 (1984-07-01), Muffoletto et al.
patent: 4493555 (1985-01-01), Reynolds
patent: 4703166 (1987-10-01), Bruning
patent: 4811055 (1989-03-01), Hirose
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Mandler, "Design of Basic Double Gauss Lenses," SPIE, vol. 237, pp. 222-232, 1980.
Cox, "Photographic Optics," pp. 240-248, 1966.
Buckley, "Expanding the Horizons of Optical Projection Lithography," Solid State Technology, pp. 77-82, 1982.
Attainment of the Theoretical Minimum Input Power of Injection Locking of an Unstable-Resonator KrF Laser, (Bigio et al.), "Optics Letters", vol. 6, No. 7, pp. 336-338 (1981).
Injection-Locked, Narrow-Band KrF Discharge Laser Using an Unstable Resonator Cavity, (Goldbar et al.), "Optics Letters", vol. 1, No. 6, pp. 199-201 (1977).
Grazing Angle Tuner for CW Lasers, (German), "Applied Optics", vol. 20, No. 18, pp. 3168-3171 (1981).
Coherent Radiation Generation at Short Wavelengths VUV and XUV Pulses, (Bradley) (1978).
Study on Laser, vol. 8, No. 6, pp. 69-71, Nov. 1980, (Photo-Etching of PMMA by Excimer Laser).

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