Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-04-24
1998-08-11
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257221, 257224, 257248, 257249, H01L 27148, H01L 29768
Patent
active
057930708
ABSTRACT:
A charge transfer device including a semiconductor substrate, a gate electrode provided in association with the substrate, the gate electrode having a corresponding channel region through which charge is propagated, the channel region having a predetermined potential; and means associated with the channel region for reducing charge trapping and recombination effects. In one aspect of the present invention, the reducing means includes a potential pocket defined within the channel region having a greater potential than the predetermined potential of said channel region. The potential pocket has a width dimension which is less than the corresponding width dimension of the channel region. The potential pocket is positioned in the center of the gate electrode, and is positioned so as to be aligned with a front edge of the gate electrode. The potential pocket is formed by an ion implantation into the semiconductor substrate, a region of an insulating layer having a thickness which differs from the thickness of the remainder of the insulating layer positioned between the gate electrode and the substrate, a second gate electrode positioned adjacent the first gate electrode, or a lightly or undoped second region of a resistive layer disposed adjacent the gate electrode.
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IEEE Transactions on Electron Devices, vol. ED-21, No. 11, Nov. 1974, pp. 701-712, "The Effects of Bulk Traps on the Performance of Bulk Channel Charge-Coupled Devices" by Arm M. Mohsen and Michael F. Tompsett.
Massachusetts Institute of Technology
Munson Gene M.
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