Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Patent
1996-03-29
1998-08-11
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
257113, 257117, 257118, 257170, 257177, H01L 2122
Patent
active
057930635
ABSTRACT:
An optically-triggered silicon controlled rectifier (SCR) (21) having a number of semiconductor layers (23, 24, 31) diffused into an N type substrate (22). Specifically, the SCR is formed by diffusing a first P+ layer (23) into an upper surface of the substrate. Then, an N+ layer (24) is diffused into a portion of an upper surface of the first P+ layer. An oxide layer (25) which is permeable to optical radiation is formed on the first P+ layer. A conductive cathode terminal (26) is then deposited on the N+ layer. Therefore, a trench (30) is etched in the lower surface of the substrate. The trench is defined by a depth and a surface. A second P+ layer (31) is diffused into the surface of the trench. The depth of the trench substantially defines a spacing between the first and second P+ layers. The chip is soldered onto a pedestal (33) formed on a lead frame (34). The solder is deposited in the trench and contacts the second P+ layer to form an anode terminal (36). The pedestal may be formed by either etching or stamping a depression (35) in the lead frame.
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patent: 3211971 (1965-10-01), Barson et al.
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patent: 3808673 (1974-05-01), Bottini
patent: 3864726 (1975-02-01), Schafer
patent: 4118257 (1978-10-01), Oberreuter et al.
patent: 4849800 (1989-07-01), Abbas et al.
patent: 5506425 (1996-04-01), Whitney et al.
Book entitled "Silicon Processing For The VLSI ERA--vol 2: Process Integration", by Stanley Wolf Ph.D., p. 84 (1990).
Abraham Fetsum
Siemens Microelectronics, Inc.
Thomas Tom
LandOfFree
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