Conductive amorphous-nitride barrier layer for high dielectric-c

Details Conductive amorphous-nitride barrier layer for high dielectric-c Conductive amorphous-nitride barrier layer for high dielectric-c

1995-06-07

1998-08-11

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257751, 257764, 257767, H01L 2904, H01L 31036, H01L 310376, H01L 320

Patent

active

057930570

ABSTRACT:
A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an amorphous nitride barrier layer (e.g. Ti--Si--N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the amorphous nitride layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The amorphous nitride barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.

REFERENCES:
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5504041 (1996-04-01), Summerfelt
patent: 5581436 (1996-12-01), Summerfelt et al.
patent: 5622893 (1997-04-01), Summerfelt et al.

Affiliated with

Also associated with

Rating

Conductive amorphous-nitride barrier layer for high dielectric-c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Conductive amorphous-nitride barrier layer for high dielectric-c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductive amorphous-nitride barrier layer for high dielectric-c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-391588