Flat-type capacitor for integrated circuit and method of...

Details Flat-type capacitor for integrated circuit and method of... Flat-type capacitor for integrated circuit and method of...

2008-05-13

2008-05-13

Malsawma, Lex (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C257SE21011

Reexamination Certificate

active

11608713

ABSTRACT:
Embodiments of the invention provide flat-type capacitors that prevent degradation of the dielectric layer, thereby improving the electrical properties of the capacitor. The capacitor includes a lower interconnection formed in a predetermined portion of a semiconductor substrate, a lower electrode formed on the lower interconnection that is electrically coupled to the lower interconnection; a concave dielectric layer formed on the lower electrode; a concave upper electrode formed on the dielectric layer; a first upper interconnection that is electrically coupled to the lower interconnection; and a second upper interconnection that is coupled to the upper electrode. The concave upper electrode is larger than the lower electrode.

REFERENCES:
patent: 5708559 (1998-01-01), Brabazon et al.
patent: 6271596 (2001-08-01), Alers
patent: 6472754 (2002-10-01), Nakajima et al.
patent: 6492223 (2002-12-01), Kanamori et al.
patent: 2003/0109135 (2003-06-01), Kim
patent: 2004/0084709 (2004-05-01), Kim et al.
patent: 9-162369 (1997-06-01), None
patent: 2000-228497 (2000-08-01), None
patent: 2001-308287 (2001-11-01), None
English language abstract of Japanese Publication No. 9-162369.
English language abstract of Japanese Publication No. 2000-228497.
English language abstract of Japanese Publication No. 2001-308287.

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