Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2008-01-22
2008-01-22
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
With measuring or testing
C438S149000, C250S338100
Reexamination Certificate
active
11418973
ABSTRACT:
Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structural layer has a stress in a predetermined range, where the predetermined range for the stress is selected prior to deposition of the structural layer. Also, the structural layer is deposited on the substrate subsequent to formation of the transistor such that deposition of the structural layer does not substantially adversely affect the operation of the transistor.
REFERENCES:
patent: 4239312 (1980-12-01), Myer et al.
patent: 4902894 (1990-02-01), Butler et al.
patent: 5010251 (1991-04-01), Grinberg et al.
patent: 5021663 (1991-06-01), Hornbeck
patent: 5119328 (1992-06-01), Matsumoto et al.
patent: 5220188 (1993-06-01), Higashi et al.
patent: 5220189 (1993-06-01), Higashi et al.
patent: 5241193 (1993-08-01), Pfiester et al.
patent: 5286976 (1994-02-01), Cole
patent: 5291055 (1994-03-01), Farhoomand et al.
patent: 5300915 (1994-04-01), Higashi et al.
patent: 5357803 (1994-10-01), Lane
patent: 5367167 (1994-11-01), Keenan
patent: 5369280 (1994-11-01), Liddiard
patent: 5371035 (1994-12-01), Pfiester et al.
patent: 5399897 (1995-03-01), Cunningham et al.
patent: 5426070 (1995-06-01), Shaw et al.
patent: 5805971 (1998-09-01), Akedo
patent: 5846849 (1998-12-01), Shaw et al.
patent: 5847454 (1998-12-01), Shaw et al.
patent: 5883564 (1999-03-01), Partin
patent: 6017779 (2000-01-01), Miyasaka
patent: 6064081 (2000-05-01), Robinson et al.
patent: 6194722 (2001-02-01), Fiorini et al.
patent: 6210988 (2001-04-01), Howe et al.
patent: 6211560 (2001-04-01), Jimenez et al.
patent: 6238581 (2001-05-01), Hawkins et al.
patent: 6274462 (2001-08-01), Fiorini et al.
patent: 6346453 (2002-02-01), Kovacic et al.
patent: 6448622 (2002-09-01), Franke et al.
patent: 6478974 (2002-11-01), Lebouitz et al.
patent: 6534381 (2003-03-01), Cheung et al.
patent: 6559021 (2003-05-01), Houghton et al.
patent: 6587613 (2003-07-01), De Natale
patent: 6666979 (2003-12-01), Chinn et al.
patent: 6689211 (2004-02-01), Wu et al.
patent: 6707121 (2004-03-01), De Moor et al.
patent: 6770569 (2004-08-01), Foerstner et al.
patent: 6794275 (2004-09-01), Kondo et al.
patent: 6822304 (2004-11-01), Honer
patent: 6875671 (2005-04-01), Faris
patent: 866701 (1998-09-01), None
patent: 2765245 (1997-06-01), None
patent: WO9116607 (1991-10-01), None
patent: WO9313561 (1993-07-01), None
patent: WO9326050 (1993-12-01), None
Wolf and Tauber, SiliconProcessing for the VLSI Era, vol. 1: Process Technology, pp. 168-173, Lattice Press 1986, Sunset Beach, California.
Franke et al.,Post-CMOS Integration of Germanium Microstructures, University of California at Berkeley, IEEE, pp. 630-637, 1999.
King et al.,Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films, Journal of the Electrochemical Society, vol. 141, No. 8, pp. 2235-2241, 1994.
Published European Search Report for Interuniversitair Micro-Elektronica Centrum, EP 02 07 7978, dated Oct. 9, 2003.
Tsu-Jae King et al.,Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films, Journal of the Electrochemical Society, Electrochemical Society, Manchester, New Hampshire, U.S., vol. 141, No. 8, pp. 2235-2241, Aug. 1, 1994.
Tsu-Jae King et al.,Polycrystalline Silicon-Germanium Thin-Film Transistors, IEEE Transactions on Electron Devices, IEEE Inc., New York, NY U.S., vol. 41, No. 9, pp. 1581-1591, Sep. 1, 1994.
Syun-Ming Jang et al.,Thermal Stability of Si/i1-xGex/Si Hetrostructures Deposited By Very Low Pressure Chemical Vapor Deposition, Applied Physics Letters, American Institute of Physics, New Your, U.S., vol. 61, No. 3, pp. 315-317, Jul. 20, 1992.
Huang et al.,Low-temperature epitaxy of phosphorus doped Di and Si/sub 1-x/Ge/sub x/films by RTP/VLP-CVD, pp. 465-467, Conference on Solid-State and Integrated Circuit Technology, Beijing, China, Oct. 24-28, 1995.
Theresa A. Core et al.,Fabrication Technology for an Integrated Surface-Micromachine Sensor, Solid State Technology, pp. 39-44, Oct. 1993.
P. Van Gerwen et al.,Thin Film Boron Doped Polycrystalline Silicon70%Germanium30%for Thermopiles, Transducers 95: Eurosensors IX, The 8thInternational Conference on Solid-State Sensors and Actuators and Eurosensors, Stockholm, Sweden, pp. 210-213, Jun. 25-29, 1995.
P. Van Gerwen et al.,Thin-film boron-doped polycrystalline silicon70%-germanium30%for thermopiles, 0924-4247/96/S1500@1996 Elseveier Sciences, S.A.
Syun-Ming Jang et al.,Therman Stability of Si/Si1-xGex/Si heterostructures deposited by very low pressure chemical vapor disposition, App. Phys. Lett., vol. 61, No. 3, Jul. 20, 1992.
Tsu-Jae King and Krishna C. Saraswat,Deposition and Properties of Low-Pressure Chemical Vapor Deposited Polycrystalline Silicon-Germanium Films, J. Electrochem Co., vol. 141, No. 8, Aug. 1994.
D. Maier-Schneider et al.,Variations in Young's modulus and intrinsic stress of LPCVD-polysilicon due to high temperature annealing, J. Micromech, Microeng. 5 pp. 121-124, 1995.
Sherif Sedky et al.,Thermally Insulated Structures for IR Bolometers, Made of Polycrystalline Silicon Germanium Alloys- . . . , Transducers '97, 1997 International Conference on Solid-State Sensors and Actuators, Chicago, Jun. 16-19, 1997.
P. Steiner et al.,Micromachining applications of porous silicon, Elsevier Science, Thin Sold Films, 255, pp. 52-58, 1995.
Akio Tanaka et al,Infrared Focal Plan Array Incorporating Silicon IC Process Compatible Bolometer, IEEE Transactions on Electron Devices, vol. 43, No. 11, pp. 1844-1850, Nov. 1996.
M. H. Unewisse et al.,The Growth and Properties of Semiconductor Bolometers for Infrared Detection, SPIE vol. 2554 Growth and Characterization of Materials for Infrared Detectors, pp. 43-54, Jul. 1995.
R. A. Wood,Uncooled thermal imaging with monolithic silicon focal planes, SPIE vol. 202 Infrared Technology XIX, pp. 322-329, 1993.
Uncooled infrared focal- . . . , Laser Focus World, Dec. 1995.
Baert Christiaan
Caymax Matty
Fiorini Paolo
Sedky Sherif
Interuniversitair Microelektronica Centrum (IMEC)
McDonnell Boehnen & Hulbert & Berghoff LLP
Toledo Fernando L.
LandOfFree
Infrared radiation detector does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Infrared radiation detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Infrared radiation detector will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3912479