Method of controlling the pressure in a process chamber

Details Method of controlling the pressure in a process chamber Method of controlling the pressure in a process chamber

2008-07-15

2008-07-15

Deo, Duy-Vu N (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S719000

Reexamination Certificate

active

11451443

ABSTRACT:
The present invention consists in a method of plasma treatment of a semiconductor substrate in a process chamber connected to a vacuum line via a valve, said treatment including a plurality of cycles comprising at least one etching step during which an etching gas is introduced alternating with at least one passivation step during which a passivation gas is introduction into said chamber, which method includes the following operations:(a) a reference pressure Prefis defined at which it is wished to effect the treatment,(b) the position of the valve is fixed during the first etching step,(c) the pressure in the process chamber is allowed to stabilize during n cycles,(d) the pressure in the process chamber is measured during the etching step during m cycles, with m at least equal to 2, and an average pressure value Pcis calculated from the measurements effected,(e) after n+m cycles, the position of the valve is corrected with a view to obtaining a pressure in the process chamber that approximates the reference pressure value Pref,(f) the steps (c) to (e) are repeated until the calculated average pressure Pcis substantially equal to the reference pressure value Prefso that it is no longer necessary to correct the position of the valve.

REFERENCES:
patent: 6051503 (2000-04-01), Bhardwaj et al.
patent: 6261962 (2001-07-01), Bhardwaj et al.
patent: 7041224 (2006-05-01), Patel et al.
patent: 7074723 (2006-07-01), Chinn et al.
patent: 2004/0235307 (2004-11-01), Johnson et al.
patent: 0 822 584 (1998-02-01), None
patent: 1 079 425 (2001-02-01), None

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