Methods for characterizing semiconductor material using...

Optics: measuring and testing – Dimension

Reexamination Certificate

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C356S369000, C356S445000

Reexamination Certificate

active

11249175

ABSTRACT:
Methods for characterizing a semiconductor material using optical metrology are disclosed. In one respect, a electromagnetic radiation source may be directed in a direction substantially parallel to patterns on a semiconductor material. A polarized spectroscopic reflectivity may be obtained, and a critical point data may be determined. Using the critical point data, physical dimensions of the patterns may be determined. In other respects, using optical metrology techniques, a critical point data relating to electron mobility may be determined.

REFERENCES:
patent: 5796983 (1998-08-01), Herzinger et al.
patent: 5864633 (1999-01-01), Opsal et al.
patent: 5907401 (1999-05-01), Clarke et al.
patent: 5963329 (1999-10-01), Conrad et al.
patent: 6465265 (2002-10-01), Opsal et al.
patent: 6590656 (2003-07-01), Xu et al.
patent: 6785638 (2004-08-01), Niu et al.
patent: 6934900 (2005-08-01), Cheng et al.
patent: 7173699 (2007-02-01), Xu et al.
patent: 2002/0033945 (2002-03-01), Xu et al.
patent: 2002/0045282 (2002-04-01), Opsal et al.
patent: 2003/0058443 (2003-03-01), Xu et al.
patent: 2004/0220760 (2004-11-01), Niu et al.
patent: 2004/0257566 (2004-12-01), Chism
patent: 2005/0248773 (2005-11-01), Rosencwaig
patent: 0710848 (1996-05-01), None
patent: WO 98/28606 (1998-07-01), None
patent: WO 9828606 (1998-07-01), None
patent: WO 99/02970 (1999-01-01), None
patent: WO 2004/107026 (2004-12-01), None
Aspnes, “The analysis of opitical spectra by fourier methods,”Surface Science, 135:284-306, 1983.
Edwards et al., “Optical characterization of wide bandgap semiconductors,”Thin Solid Films, 364:98-106, 2000.
PCT International Search Report, dated Oct. 18, 2006.
Sanders and Chang, “Theory of optical properties of quantum wires in porous silicon,”Phys. Rev. B., 45:9202, 1992.
Yoo and Aspnes, “Elimination of endpoint-discontinuity artifacts in the analysis of spectra in reciprocal space,”J. Appl. Phys., 89:8183-8192, 2001.
Yoo et al., “Analysis of optical spectra by Fourier methods,”Thin Solid Films, 313-314:143-148, 1998.
Yoo et al., “High-resolution spectroscopy with reciprocal-space analysis: application to isotopically pure Si,”Physica Status Solidi B, 220:117-125, 2000.
Zhao et al., “Quantum Confinement and Electronic Properties of Silicon Nanowires,”Phys. Rev. Lett., 92:236805, 2004.
Karrer et al., “Optical Properties of Cl-Doped ZnSe Epilayers Grown on GaAs Substrates,”J. Elect. Mat., 34:944-948, 2005.
PCT Invitation to Pay Additional Fees, dated Feb. 21, 2007.
Gavrilenko et al., “Electroreflectance spectra of thin silicon films,”Thin Solid Films, 37:201-206, 1976.
PCT International Search Report and Written Opinion, issued in International Application No. PCT/US2006/040262, dated May 10, 2007.

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