Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2008-04-29
2008-04-29
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S183000, C257S191000
Reexamination Certificate
active
11121793
ABSTRACT:
Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.
REFERENCES:
patent: 5192987 (1993-03-01), Khan et al.
patent: 5239188 (1993-08-01), Takeuchi et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5296395 (1994-03-01), Khan et al.
patent: 5389571 (1995-02-01), Takeuchi et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5633192 (1997-05-01), Moustakas et al.
patent: 5679965 (1997-10-01), Schetzina
patent: 5690736 (1997-11-01), Tokunaga
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5741724 (1998-04-01), Ramandi et al.
patent: 5760426 (1998-06-01), Marx et al.
patent: 5786606 (1998-07-01), Nishio et al.
patent: 5815520 (1998-09-01), Furushima
patent: 5838029 (1998-11-01), Shakuda
patent: 5838706 (1998-11-01), Edmond et al.
patent: 5874747 (1999-02-01), Redwing et al.
patent: 5929467 (1999-07-01), Kawai et al.
patent: 6051849 (2000-04-01), Davis et al.
patent: 6064078 (2000-05-01), Northrup et al.
patent: 6064082 (2000-05-01), Kawai et al.
patent: 6069021 (2000-05-01), Terashima et al.
patent: 6100545 (2000-08-01), Chiyo et al.
patent: 6120600 (2000-09-01), Edmond et al.
patent: 6121121 (2000-09-01), Koide
patent: 6139628 (2000-10-01), Yuri et al.
patent: 6146457 (2000-11-01), Solomon
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6177688 (2001-01-01), Linthicum et al.
patent: 6180270 (2001-01-01), Cole et al.
patent: 6201262 (2001-03-01), Edmond et al.
patent: 6255198 (2001-07-01), Linthicum et al.
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6261931 (2001-07-01), Keller et al.
patent: 6265289 (2001-07-01), Zheleva et al.
patent: 6291319 (2001-09-01), Yu et al.
patent: 6328796 (2001-12-01), Kub et al.
patent: 6329063 (2001-12-01), Lo et al.
patent: 6380108 (2002-04-01), Linthicum et al.
patent: 6391748 (2002-05-01), Temkin et al.
patent: 6403451 (2002-06-01), Linthicum et al.
patent: 6420197 (2002-07-01), Ishida et al.
patent: 6426512 (2002-07-01), Ito et al.
patent: 6440823 (2002-08-01), Vaudo et al.
patent: 6441393 (2002-08-01), Goetz et al.
patent: 6459712 (2002-10-01), Tanaka et al.
patent: 6465814 (2002-10-01), Kasahara et al.
patent: 6486502 (2002-11-01), Sheppard et al.
patent: 6497763 (2002-12-01), Kub et al.
patent: 6498111 (2002-12-01), Kapolnek et al.
patent: 6521514 (2003-02-01), Gehrke et al.
patent: 6524932 (2003-02-01), Zhang et al.
patent: 6548333 (2003-04-01), Smith
patent: 6583034 (2003-06-01), Ramdani et al.
patent: 6583454 (2003-06-01), Sheppard et al.
patent: 6586781 (2003-07-01), Wu et al.
patent: 6610144 (2003-08-01), Mishra et al.
patent: 6611002 (2003-08-01), Weeks et al.
patent: 6617060 (2003-09-01), Weeks et al.
patent: 6624452 (2003-09-01), Yu et al.
patent: 6649287 (2003-11-01), Weeks, Jr. et al.
patent: 6765240 (2004-07-01), Tischler et al.
patent: 6765241 (2004-07-01), Ohno et al.
patent: 6777278 (2004-08-01), Smith
patent: 6841409 (2005-01-01), Onishi
patent: 6849882 (2005-02-01), Chavarkar et al.
patent: 2001/0042503 (2001-11-01), Lo et al.
patent: 2002/0020341 (2002-02-01), Marchand et al.
patent: 2002/0117695 (2002-08-01), Borges
patent: 2002/0187356 (2002-12-01), Weeks et al.
patent: 2003/0045103 (2003-03-01), Suzuki et al.
patent: 2003/0064535 (2003-04-01), Kub et al.
patent: 2003/0136333 (2003-07-01), Semond et al.
patent: 2004/0009649 (2004-01-01), Kub et al.
patent: 2004/0012015 (2004-01-01), Saxler
patent: 2004/0033638 (2004-02-01), Bader et al.
patent: 2005/0082563 (2005-04-01), Tsai et al.
patent: 2005/0133818 (2005-06-01), Johnson et al.
patent: 2005/0145851 (2005-07-01), Johnson et al.
patent: 2005/0167775 (2005-08-01), Nagy et al.
patent: 2005/0285141 (2005-12-01), Piner et al.
patent: 2005/0285142 (2005-12-01), Piner et al.
patent: 2006/0006500 (2006-01-01), Piner et al.
patent: 2000-311863 (2000-11-01), None
patent: WO 96/41906 (1996-12-01), None
patent: WO 01/13436 (2001-02-01), None
Brown, J.D. et al., “A1GaN/GaN HFETs Fabricated on 100-mm GaN on Silicon (111) Substrates,” Solid-State Electronics 46:1535 (2002).
Brown, J.D. et al., “Performance of A1GaN/GaN HFETs Fabricated on 100mm Silicon Substrates for Wireless Basestation Applications,” Nitronex Corporation, IEEE MTT-S Digest p. 833 (2004).
Chen, P. et al., “Growth of High Quality GaN Layers With A1N Buffer on Si(111) Substrates,” J. Crystal Growth 225:150 (2001).
Chumbes, E., et al., “A1GaN/GaN High Electron Mobility Transistors on Si(111) Substrates”, IEEE Transactions on Electron Devices, vol. 48 No. 3 (2001).
Dadgar, A. et al., “Bright, Crack-Free InGaN/GaN Light Emitters on Si(111),” Phys. Stat. Sol. 192(2):308 (2002).
Dadgar, A. et al., “Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 μm in Thickness,” Jpn. J. Appl. Phys. 39:L1183 (2000).
Dadgar, A. et al., “MOVPE Growth of GaN on Si(111) Substrates,” J. Crystal Growth 248:556 (2003).
Elhamri, S. et al., “An Electrical Characterization of a Two Dimensional Electron Gas in GaN/A1GaN on Silicon Substrates,” J. Appl. Phys. 95(12):7982 (2004).
Guha, S. et al., “Ultraviolet and Violet GaN Light Emitting Diodes on Silicon,” Appl. Phys. Lett. 72(4):415 (1998).
Hageman, P.R. et al., “High Quality GaN Layers on Si(111) Substrates: A1N Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer,” Phys. Stat. Sol. 188(2):523 (2001).
Hanson, A.W. et al., “Development of a GaN Transistor Process for Linear Power Applications,” Nitronex Corporation, Paper presented at the 2004 International Conference on Compound Semiconductor Manufacturing Technology (GaAs MANTECH), Miami, FL.
Hirosawa, K. et al., “Growth of Single Crystal A12Ga1-aN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 32:L1039 (1993).
Hobart, K.D., et al., “Bonded Polycrystalline SiC Substrates for the Growth and Fabrication of GaN FETs”, The Electrochemical Society, Inc., Proceedings, vol. 2001-27 (2002) 92-99.
Hobart, K.D., et al., “Transfer of Ultrathin Silicon Layers to Polycrystalline SiC Substrates for the Growth of 3C-SiC Epitaxial Films”, Journal of the Electrochemical Society, 146 (10) (1999) 3833-3836.
Ishikawa, H. et al., “High-Quality GaN on Si Substrate Using A1GaN/A1N Intermediate Layer,” Phys. Stat. Sol. 176:599 (1999).
Johnson, J.W. et al., “12 W/mm A1GaN-GaN HFETs on Silicon Substrates,” IEEE Electron Device Lett. 25(7):459 (2004).
Johnson, J.W. et al., “Material, Process, and Device Development of GaN-Based HFETs on Silicon Substrates,” Nitronex Corporation, Electrochemical Society Proceedings Jun. 2004, 405 (2004).
Kang, B.S. et al., “Pressure-Induced Changes in the Conductivity of A1GaN/GaN High-Electron Mobility-Transistor Membranes,” Appl. Phys. Lett. 85(14):2962 (2004).
Lahreche, H. et al., “Optimisation of A1N and GaN Growth by Metalorganic Vapour-Phase Epitaxy (MOVPE) on Si(111),” J. Crystal Growth 217:13 (2000).
Lee, I. et al., “Growth and Optical Properties of GaN on Si(111) Substrates,” J. Crystal Growth 235:73 (2002).
Lei, T. et al., “Epitaxial Growth of Zinc Blende and Wurtzitic Gallium Nitride Thin Films on (001) Silicon,” Appl. Phys. Lett. 59(8):944 (199
Linthicum Kevin J.
Piner Edwin L.
Rajagopal Pradeep
Roberts John C.
Nitronex Corporation
Tran Tan
Wolf Greenfield & Sacks P.C.
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