Plasma doping method and plasma doping apparatus

Details Plasma doping method and plasma doping apparatus Plasma doping method and plasma doping apparatus

2008-04-15

2008-04-15

Vanore, David A. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C438S510000, C438S513000, C438S517000, C204S192150

Reexamination Certificate

active

11748607

ABSTRACT:
A plasma doping method, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. The method includes preparing a vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film is attacked by ions in plasma, the amount of an impurity to be doped into the surface of a sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber; placing the sample on the sample electrode; and irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.

REFERENCES:
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 4937205 (1990-06-01), Nakayama et al.
patent: 5607509 (1997-03-01), Schumacher et al.
patent: 5789292 (1998-08-01), Yamazaki et al.
patent: 5851906 (1998-12-01), Mizuno et al.
patent: 5962858 (1999-10-01), Gwinn
patent: 6165876 (2000-12-01), Yamazaki et al.
patent: 6403410 (2002-06-01), Ohira et al.
patent: 6435196 (2002-08-01), Satoh et al.
patent: 2001/0037939 (2001-11-01), Nakaoka et al.
patent: 2004/0045507 (2004-03-01), Okumura et al.
patent: 2004/0251424 (2004-12-01), Murata et al.
patent: 2005/0016838 (2005-01-01), Murata et al.
patent: 2005/0051272 (2005-03-01), Collins et al.
patent: 2005/0170669 (2005-08-01), Okumura et al.
patent: 2005/0269520 (2005-12-01), Horsky et al.
patent: 2005/0287776 (2005-12-01), Sasaki et al.
patent: 2006/0019039 (2006-01-01), Hanawa et al.
patent: 2006/0183350 (2006-08-01), Kudo et al.
patent: 2006/0264051 (2006-11-01), Thibaut
patent: 2007/0023700 (2007-02-01), Koezuka et al.
patent: 2007/0026649 (2007-02-01), Okumura et al.
patent: 2007/0037367 (2007-02-01), Okumura et al.
patent: 2007/0048453 (2007-03-01), Qin et al.
patent: 63-30727 (1994-11-01), None
patent: 8-293279 (1996-11-01), None
patent: 9-115852 (1997-05-01), None
patent: 11-87261 (1999-03-01), None
patent: 11-154482 (1999-06-01), None
patent: 11-329266 (1999-11-01), None
patent: 3340318 (2002-08-01), None
patent: 2004-47695 (2004-02-01), None
patent: 2004-179592 (2004-06-01), None
patent: 2005-109453 (2005-04-01), None
patent: WO 2004/109785 (2004-12-01), None
patent: WO2005/020306 (2005-03-01), None
Jones, E. C., Cheung, N.W., “Plasma Doping Dosimetry”, IEEE Transactions on Plasma Science, vol. 25, No. 1, Feb. 1997, pp. 42-52.
Cheung, N.W., “Plasma Immersion Ion Implantation for ULSI Processing”, Nuclear Instruments and Methods in Physics Research: Beam Interactions with Materials and Atoms, vol. B55, No. 1/4, Apr. 1991.
Mizuno et al., “New Methods for Ultra Shallow Boron Doping by Using Plasma—Plasma-Less and Sputtering”, International Conferences on Solid State Devices and Materials, Aug. 1995, pp. 1041-1042.
Greiner et al., “RF Sputtering Technique”, IBM Technical Disclosure Bulletin, vol. 17, No. 7, pp. 2172-2173.
Bunshah, “Deposition Technologies for Films and Coatings”, Chapter 5, pp. 170-237, Noyes Publishing, 1982.
Guarnieri, C.R. et al., “RF Ion Source”, IBM Technical Disclosure Bulletin, Apr. 1982, pp. 5833-5835.
Sasaki et al. “B2H6Plasma Doping with in-situ He Pre-amorphization”, Symposium on VLSI Tech. p. 180-181, 2004.
Mizuno et al. “Plasma Doping into the Side-Wall of Sub-0.5μm Width Trench”, Extended Abstracts of the 19th Conference on Solid State Devices and Materials, 1987, p. 319-322, Tokyo.
Mizuno et al. “Plasma doping for silicon”, Surface and Coatings Technology, 1996, p. 51-55, vol. 85.
Mizuno et al. “Plasma Doping of Boron for Fabricating the Surface channel Sub-quarter micron PMOSFET”, Symposium on VLSI. Technology Digest of Technical Papers. 1996, p. 66-67.
International Technology Roadmap for Semiconductors 2001 Edition. 2001. p. 223-225.
Cheung, Nathan W., “Plasma immersion ion implantation for ULSI processing”, Nuclear Methods and Methods in Physics Research, 1991, pp. 811-820, B55, Elsevier Science Publishers B.V.
Yamashita, F., et al., “Direct Joule Heating of Nd-Fe-B Based Melt-Spun Powder and Zinc Binder”, 1999, IEEE.
Chu, P.K., et al., “Part one of two, Plasma Doping: Progress and potential”, Solid State Technology, Sep. 1999, pp. 55-60, www.solid-state.com.
Chu, P.K., et al., “Part two of two, Plasma Doping: Progress and potential”, Solid State Technology, Oct. 1999, pp. 77-82, www.solid-state.com.
Hori, A., et al., “CMOS Device Technology toward 50 nm Region—Performance and Drain Architecture—”, IEDM, 1999, pp. 641-644, IEEE.
Kwok, Dixon T.K., et al., “Energy distribution and depth profile in BF3plasma doping”, Surface and Coatings Technology, 2001, pp. 146-150, vol. 136, Elsevier Science B.V.
Yamashita, F., et al., “Nd-Fe-B Thin Arc-shaped Bonded Magnets for Small DC Motors Prepared by Powder Compacting Press with Ion-implanted Punches”, J. Mgn. Soc. Japan, 2001, pp. 683-686, vol. 25, No. 4-2.
Yamashita, F., et al., “Preparation of a Solid Rotor Composed of a Highly Dense Ring-Shaped RE Bonded Magnet and an Iron-Dust Core”, Trans. Magn. Soc. Japan., 2002, pp. 111-114, vol. 2, No. 3.
Mizuni, B., “Ultra Shallow Junction for sub-50NM CMOS—The role of Plasma Doping-”, UJTLab, pp. 10-13, Ultimate Junction Technologies Inc.
Sasaki, Y., et al., “B2H6Plasma Doping with In-situ He Pre-amorphization”, Symposium on VLSI Technology Digest of Technical Papers, 2004, pp. 180-181, IEEE.
Sasaki, Y., et al., “Plasma Doped Shallow Junction Formation”, Matsushita Technical Journal, Dec. 2004, pp. 404-409, vol. 50 No. 6.
Tsutsui, K., et al., “Doping Effects from Neutral B2H6Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping”, The Japan Society of Applied Physics, 2005, pp. 3903-0907, vol. 44 No. 6A.
Mizuno, B., et al., “De-Excitation Pathways of highly-Excited Self-Trapped Exciton and Electron Plus Self-Trapped Hole”, Journal of the Physical Society of Japan, Jun. 1983, pp. 1901-1903, vol. 52 No. 6.
Mizuno, B., “Excitation-Induced Atomic Motion of Self-Trapped Excitons in RbCl: Reorientation and Defect Formation”, Journal of the Physical Society of Japan, Sep. 1986, pp. 3258-3271, vol. 55 No. 9.
Mizuno. B., et al., “Effect of Hydrogen on Oxygen Removal from Silicon-Overlayer on Insulator formed by O+Implantation”, pp. 637-640, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
Fujita, T., et al., “Electron Paramagnetic Resonance Studies of Defects in Oxygen-implanted Silicon”, Jaanese Journal of Applied Physics, Jul. 1987, pp. L1116-L1118, vol. 26 No. 7.
Mizuno, B., et al., “Effective removal of oxygen from Si layer on burned oxide by implantation of hydrogen”, J. Appl. Phys., Sep. 1987, pp. 2566-2568, vol. 62 No. 6.
Mizuno, B., et al., “New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma”, Appl. Phys. Lett., Nov. 1988, pp. 2059-2061, vol. 53 No. 21, American Institute of Physics.
Shimizu, N., et al., “Reduction of Thickness Secondary Defects in MeV Ion Impalted Silicon by Intrinsic Gettering”, Extended Abstracts of the 21st Conference on Solid State Devices and Materials, Tokyo, 1989, pp. 177-180.
Hori, A., et al., “A 0.05 μm-CMOS with Ultra Shallow Source/Drain Junctions Fabricated by 5KeV Ion Implantation and Rapid Thermal Annealling”, 1994, pp. 485-488, IEDM.
Hori, A., et al., “Fabrication and Characteristics of Room Temeprature 0.05 μm-CMOS—Possibility and Design Concept of Sub-0.1 μm MOS Devices-”, Technical Report of IEICE, 1995, pp. 41-46, The Institute of Electronics, Information and Communication Engineers.
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