Methods for uniform metal impregnation into a nanoporous...

Details Methods for uniform metal impregnation into a nanoporous... Methods for uniform metal impregnation into a nanoporous...

2008-04-22

2008-04-22

Soderquist, Arlen (Department: 1797)

Chemical apparatus and process disinfecting, deodorizing, preser

Control element responsive to a sensed operating condition

C422S051000, C422S082050, C422S105000, C436S002000, C436S005000, C436S164000, C436S183000, C438S589000

Reexamination Certificate

active

10368976

ABSTRACT:
The methods, systems400and apparatus disclosed herein concern metal150impregnated porous substrates110, 210.Certain embodiments of the invention concern methods for producing metal-coated porous silicon substrates110, 210that exhibit greatly improved uniformity and depth of penetration of metal150deposition. The increased uniformity and depth allow improved and more reproducible Raman detection of analytes. In exemplary embodiments of the invention, the methods may comprise oxidation of porous silicon110,immersion in a metal salt solution130,drying and thermal decomposition of the metal salt140to form a metal deposit150.In other exemplary embodiments of the invention, the methods may comprise microfluidic impregnation of porous silicon substrates210with one or more metal salt solutions130.Other embodiments of the invention concern apparatus and/or systems400for Raman detection of analytes, comprising metal-coated porous silicon substrates110, 210prepared by the disclosed methods.

REFERENCES:
patent: 3725307 (1973-04-01), Brown et al.
patent: 3883307 (1975-05-01), Kim
patent: 4303612 (1981-12-01), Sonley
patent: 4801380 (1989-01-01), Parker et al.
patent: 5064693 (1991-11-01), Hayakawa et al.
patent: 5255067 (1993-10-01), Carrabba et al.
patent: 5306403 (1994-04-01), Vo-Dinh
patent: 5561304 (1996-10-01), Canham et al.
patent: 5567628 (1996-10-01), Tarcha et al.
patent: 5770022 (1998-06-01), Chang et al.
patent: 5874047 (1999-02-01), Schoning et al.
patent: 5994164 (1999-11-01), Fonash et al.
patent: 6002471 (1999-12-01), Quake
patent: 6017773 (2000-01-01), Fauchet et al.
patent: 6040191 (2000-03-01), Grow
patent: 6096496 (2000-08-01), Frankel
patent: 6136389 (2000-10-01), Conover et al.
patent: 6136704 (2000-10-01), Maya
patent: 6149868 (2000-11-01), Natan et al.
patent: 6153489 (2000-11-01), Park et al.
patent: 6171945 (2001-01-01), Mandal et al.
patent: 6174677 (2001-01-01), Vo-Dinh
patent: 6180415 (2001-01-01), Schultz et al.
patent: 6249080 (2001-06-01), Komoda et al.
patent: 6263286 (2001-07-01), Gilmanshin et al.
patent: 6268041 (2001-07-01), Goldstein
patent: 6294442 (2001-09-01), Kamal
patent: 6300193 (2001-10-01), Forbes
patent: 6312768 (2001-11-01), Rode et al.
patent: 6313914 (2001-11-01), Roe
patent: 6322895 (2001-11-01), Canham
patent: 6344272 (2002-02-01), Oldenburg et al.
patent: 6358613 (2002-03-01), Buriak
patent: 6358815 (2002-03-01), Maeda
patent: 6359276 (2002-03-01), Tu
patent: 6376177 (2002-04-01), Poponin
patent: 6399177 (2002-06-01), Fonash et al.
patent: 6406984 (2002-06-01), Russell et al.
patent: 6426126 (2002-07-01), Conover et al.
patent: 6478974 (2002-11-01), Lebouitz et al.
patent: 6504292 (2003-01-01), Choi et al.
patent: 6673644 (2004-01-01), Gole et al.
patent: 6806543 (2004-10-01), Yamakawa et al.
patent: 6841290 (2005-01-01), Klitsner et al.
patent: 6893816 (2005-05-01), Beattie
patent: 6970239 (2005-11-01), Chan et al.
patent: 6972173 (2005-12-01), Su et al.
patent: 6989897 (2006-01-01), Chan et al.
patent: 7192703 (2007-03-01), Sun et al.
patent: 7238477 (2007-07-01), Su et al.
patent: 7267948 (2007-09-01), Vo-Dinh
patent: 2002/0020053 (2002-02-01), Fonash et al.
patent: 2003/0135997 (2003-07-01), Watanabe et al.
patent: 2003/0231304 (2003-12-01), Chan et al.
patent: 2006/0049356 (2006-03-01), Shen et al.
patent: 0984269 (2000-03-01), None
patent: 590479 (1947-07-01), None
patent: 2373367 (2002-09-01), None
patent: 00/37694 (2000-06-01), None
patent: WO03/106943 (2003-12-01), None
Pavesi, L. et al, Journal of Applied Physics 1994, 75, 1118-1126.
Coulthard, I. et al, Materials Research Society Symposium Proceedings 1997, 457, 161-165.
Coulthard, I. et al, Solid State Communications 1998, 105, 751-754.
Wang, G et al, Faguang Xuebao 1999, 20, 270-273.
Alieva, E. V. et al, Physica Status Solidi A 1999, 175, 115-120.
Baltog, I. et al, Romanian Reports in Physics 2000, 51, 823-841.
Baratto, C. et al, Sensors and Actuators B 2000, 68, 74-80.
Sakka, T. et al, Journal of Porous Materials 2000, 7, 397-400.
Korsunskaya, N. E. et al, ASDAM 2000, International EuroConference on Advanced Semiconductor Devices and Microsystems, Conference Proceedings, 3rd, Smolenice Castle, Slovakia, Oct. 16-18, 2000, 339-342, Editor: Osvald, J., Publisher: Institute of Electrical and Electronics Engineers, New York, N. Y., no month.
Pap, A. E. et al, Applied Surface Science 2002, 201), 56-60, no date.
Cai, et al., “Optical Properties of Ag and Au Nanoparticles Dispersed within the Pores of Monolithic Mesoporous Silica,”J. Nanoparticle Res. 3:443-453, 2001.
Cai, et al., “Direct Formation of Self-Assembled Nanoporous Aluminium Oxide in SiO2and Si Substrates,”Nanotechnology13:627, 2002.
Canham, “Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers,”Appl. Phys. Lett. 57:1046, 1990.
Chan, et al., “Tunable, Narrow, and Directional Luminescence From Porous Silicon Light Emitting Devices,”Applied Physics Lett. 75:274-276, 1999.
Collins, et al., “Porous Silicon: From Luminescence to LEDs,”Physics Today50:24-31, 1997.
Cullis, et al., “The Structural and Luminescence Properties of Porous Silicon,”J. Appl. Phys. 82:909-965, 1997.
Duffy, et al., “Rapid Prototyping of Microfludidic Systems in Poly(dimethylsiloxane),”Anal. Chem. 70:4974-84, 1998.
Edelberg, et al., “Visible Luminescence from Nanocrystalline Silicon Films Produced by Plasma Enhanced Chemical Vapor Deposition,”Appl. Phys. Lett., 68:1415-1417, 1996.
Feldheim, “Assembly of Metal Nanoparticle Arrays Using Molecular Bridges,”The Electrochemical Society Interface, Fall, 2001, pp. 22-25.
Gole, et al., “Patterned Metallization of Porous Silicon from Electroless Solution for Direct Electrical Contact,”J. Electrochem. Soc., 147:3785, 2000.
Henneke, “Porous Silicon: Theories Behind Light Emission,” 1996, 1-4. Retrieved from the Internet URL: <http:/
eon.utexas.edu/academic/courses/Fall1997/CH380L/student.papers/dh.html>.
Jin, et al., “Photoinduced Conversion of Silver Nanospheres to Nanoprisms,”Science294:1901, 2001.
Lopez, et al., “Erbium Emission Form Porous Silicon One-Dimensional Photonic Band Gap Structures,”Appl. Phys. Lett. 77:3704-6, 2000.
Lützen, et al., “Structural Characteristics of Ultrathin Nanocrystalline Silicon Films Formed by Annealing Amorphous Silicon,”J. Vac. Sci. Technology B16:2802-05, 1998.
Petrova-Koch, et al.., “Rapid-Thermal-Oxidized Porous Si- The Superior Photoluminescent Si,”Appl. Phys. Lett.. 61(8):943, 1992.
Schoenfeld, et al., “Formation of Si Quantum Dots in Nanocrystalline Silicon,” Proc. 7thInt. Conf. On Modulated Semiconductor Structures, Madrid, pp. 605-608, 1995.
Varghese, et al., “Highly Ordered Nanoporous Alumina Films: Effect of Pore Size and Uniformity on Sensing Performance,”J. Mater. Res. 17:1162-1171, 2002.
Weiping, et al. “Synthesis and Structural and Optical Properties of Mesoporous Silica Containing Silver Nanoparticles,”J. Phys. Condens. Matter9:7257-67, 1997.
Vo-Dinh, Tuan, “Surface-enhanced Raman spectroscopy using metallic nanostructures”,Trends in Analytical Chemistry, Analytical Chemistry, Cambridge, GB, vol. 17, No. 8-9, 557-582, Aug. 9, 1998.
Gole, J.L., et al., “Patterned Metallization of Porous Silicon from Electroless Solution for Direct Electrical Contact”,Journal of the Electrochemical Society, vol. 147, No. 10, 3785-3789, Oct. 2000.
Ünal, B et al., “Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices”,Optical Materials, Elsevier Science Publishers B.V. Amsterdam, NL, vol. 17, No. 1-2, 79-82, Jun. 2001.
Craighead. (2000). “Nanoelectromechanical Systems,”Science290: 1532-1536.
Voldman et al. (1999). “Microfabrication in Biology and Medicine,”Annual Review of Biomedical Engineering1:401-425.
Zhao et al. (1995). “Nanocrystalline Si: a

Affiliated with

Also associated with

Rating

Methods for uniform metal impregnation into a nanoporous... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for uniform metal impregnation into a nanoporous..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for uniform metal impregnation into a nanoporous... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3909706