Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2008-03-18
2008-03-18
Klimowicz, William J (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C365S158000, C365S171000, C365S173000
Reexamination Certificate
active
11367483
ABSTRACT:
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
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Inomata Koichiro
Kishi Tatsuya
Nakajima Kentaro
Sagoi Masayuki
Saito Yoshiaki
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