Solid-state imaging device

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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Details

C250S214100, C257S443000, C348S073000

Reexamination Certificate

active

11826926

ABSTRACT:
The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.

REFERENCES:
patent: 6211509 (2001-04-01), Inoue et al.
patent: 6215165 (2001-04-01), Connolly et al.
patent: 6570222 (2003-05-01), Nozaki et al.
patent: 7262396 (2007-08-01), Inoue et al.
patent: 2006/0219687 (2006-10-01), Yamaguchi et al.
patent: 2007/0262240 (2007-11-01), Inoue et al.
patent: 2007/0262241 (2007-11-01), Inoue et al.
patent: 2000-299453 (2000-10-01), None

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