Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2008-01-29
2008-01-29
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21318, C257SE21568, C438S471000
Reexamination Certificate
active
11229698
ABSTRACT:
A method of manufacturing a crystalline wafer that includes implanting first atomic species in a donor substrate to form a region of weakness at a first depth therein and configured to facilitate detachment of a first layer of the donor substrate from a remaining portion of the donor substrate. The first layer and remaining portion are disposed on opposite sides of the region of weakness. The method also includes implanting second atomic species in the donor substrate to form a gettering region at a second depth therein that is different than the first depth to reduce or minimize migration of the implanted first atomic species past the gettering region. This reduces or minimizes an increase in roughness of a surface produced on the first layer after detachment thereof from the remaining portion at the region of weakness.
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S.O.I.Tec Silicon on Insulator Technologies
Sarkar Asok Kumar
Winston & Strawn LLP
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