Synthesis of large homoepitaxial monocrystalline diamond

Details Synthesis of large homoepitaxial monocrystalline diamond Synthesis of large homoepitaxial monocrystalline diamond

2008-07-15

2008-07-15

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S068000, C423S446000

Reexamination Certificate

active

11515259

ABSTRACT:
A method for producing a large homoepitaxial monocrystalline diamond. The method comprises placing at least two substrates in a substrate holder in a chemical vapor deposition (CVD) chamber. The substrates are positioned in such a manner that the growth faces of the substrates form a wedge. A diamond forming gas is provided adjacent to the substrates in the CVD chamber. The diamond forming gas is exposed to microwave radiation to generate a plasma. Then, the substrates are exposed to the plasma under such conditions that diamond growth occurs in the wedge between the substrates, to form a large homoepitaxial monocrystalline diamond.

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Chlh-Shlue Yan; Yogesh K. Vohra; Ho-Kwang Mao; Russell J. Hemley “Very High Growth Rate Chemical Vapor Deposition of Single-Crystal Diamond”Proceedings of the National Academy of Sciences of the United States of America(PNAS), vol. 99, Issue 20, p. 12523-12525,, Publication Date: Oct. 2002.

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