Communication semiconductor integrated circuit device and...

Amplifiers – With control of power supply or bias voltage – With control of input electrode or gain control electrode bias

Reexamination Certificate

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C330S279000, C330S285000

Reexamination Certificate

active

10836197

ABSTRACT:
The present invention provides a communication semiconductor integrated circuit device equipped with a high-frequency power amplifier circuit including a gain control amplifier and a bias circuit which supplies such a bias current as to linearly change the gain of the gain control amplifier, and a wireless communication system using the same. A bias current generating circuit which supplies a bias current to a linear amplifier that constitutes the communication high-frequency power amplifier circuit, comprises a plurality of variable current sources respectively different in current value and start level. These variable current sources are controlled according to an input control voltage and thereby combine their currents into a bias current. The combined bias current changes exponentially with respect to the input control voltage.

REFERENCES:
patent: 6049252 (2000-04-01), Iwata
patent: 6175279 (2001-01-01), Ciccarelli et al.
patent: 6278325 (2001-08-01), Juang
patent: 6847807 (2005-01-01), Fujiki

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