Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device
Reexamination Certificate
2007-10-23
2007-10-23
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Having diverse electrical device
C438S048000, C438S400000, C257S510000
Reexamination Certificate
active
10701534
ABSTRACT:
The invention is directed to a method for optical and electrical isolation between adjacent integrated devices. The method comprises the steps of forming at least one trench through an exposed surface of a semiconductor wafer by removing a portion of the semiconductor wafer material, forming an electrically insulating layer on the sidewalls and the bottom of the at least one trench, filling the at least one trench by conformally depositing an optically isolating material, and planarizing the semiconductor wafer surface by removing the portion of the optically isolating material above the exposed surface of the semiconductor wafer.
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Brown Dal Marius
Fedison Jeffrey Bernard
Kretchmer James William
Sandvik Peter Micah
General Electric Company
Lee Hsien-Ming
Yoder Fletcher
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