Methods of fabricating gate spacers for semiconductor devices

Details Methods of fabricating gate spacers for semiconductor devices Methods of fabricating gate spacers for semiconductor devices

2007-08-21

2007-08-21

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21310

Reexamination Certificate

active

11026937

ABSTRACT:
A method of fabricating the gate spacers of semiconductor devices is disclosed. An example method forms a gate on a semiconductor substrate, deposits a buffer oxide layer and a nitride layer sequentially on the whole semiconductor substrate including the gate, and forms spacers by etching the nitride layer.

REFERENCES:
patent: 5953615 (1999-09-01), Yu
patent: 6015747 (2000-01-01), Lopatin et al.
patent: 6194279 (2001-02-01), Chen et al.
patent: 6207544 (2001-03-01), Nguyen et al.
patent: 6277700 (2001-08-01), Yu et al.
patent: 2002/0003126 (2002-01-01), Kumar et al.
patent: 2004/0089632 (2004-05-01), Park et al.
patent: 2005/0277250 (2005-12-01), Pan et al.
patent: 2005/0284576 (2005-12-01), America et al.

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