Self-aligned metal field effect transistor integrated circuit

Details Self-aligned metal field effect transistor integrated circuit Self-aligned metal field effect transistor integrated circuit

1982-08-06

1985-04-23

Larkins, William D.

357 59, 357 51, 357 50, 357 239, 357 71, 357 68, 357 236, H01L 2994, H01L 2976

Patent

active

045133034

ABSTRACT:
A self-aligned metal field effect transistor is described which achieves self-aligned metal to silicon contacts and submicron contact-to-contact and metal-to-metal spacing for field effect transistor integrated circuits. The insulation between the contacts and the metal is a pattern of dielectric material having a thickness dimension in the order of a micron or less. The metal and dielectric structure is substantially planar.

REFERENCES:
patent: 4037307 (1977-07-01), Smith
patent: 4209349 (1980-06-01), Ho et al.
patent: 4209350 (1980-06-01), Ho et al.

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