Method of making heterojunction P-I-N photovoltaic cell

Details Method of making heterojunction P-I-N photovoltaic cell Method of making heterojunction P-I-N photovoltaic cell

1989-08-01

1990-12-11

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437 5, H01L 3118

Patent

active

049770977

ABSTRACT:
A heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers formed of at least four different elements comprises a p-type relatively wide band gap semiconductor layer, a high resistivity intrinsic semiconductor layer, used as an absorber of light radiation, and an n-type relatively wide band gap semiconductor layer. The intrinsic layer is in electrically conductive contact on one side with the p-type layer and on an opposite side with the n-type layer. First and second ohmic contacts are in electrically conductive contact with the p-type layer and the n-type layer, respectively.

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