Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Reexamination Certificate
2007-10-02
2007-10-02
Nguyen, Khanh Van (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
C330S295000
Reexamination Certificate
active
11060299
ABSTRACT:
A distributed amplifier with a simple structure that permits miniaturization of circuit in which the input-side transmission line of the distributed amplifier is constituted by a coplanar line having a signal line and a ground face formed on the upper face of a dielectric substrate and the output-side transmission line of the distributed amplifier is constituted by a microstrip line having a signal line formed on the upper face of the dielectric substrate and a ground face formed on the lower face of the dielectric substrate. In addition, a plurality of amplification transistors is formed on the upper face of the dielectric substrate and each of the electrodes is connected to the signal line or the ground face that is formed on the upper face of the dielectric substrate. Because a large transistor-drive current does not flow to the input-side transmission line, the signal line can be made narrow and there is no increase in the required surface area even in the case of a coplanar line. Further, because the ground face of the coplanar line can be formed on the upper face of the dielectric substrate, the source electrodes or similar of the transistors can be grounded easily with a simple structure.
REFERENCES:
patent: 4456888 (1984-06-01), Ayasli
patent: 07-183428 (1995-07-01), None
patent: 2003-152476 (2003-05-01), None
Kosugi Makoto
Nishino Akira
Ogawa Yasunori
Nguyen Khanh Van
Oki Electric Industry Co. Ltd.
Rabin & Berdo P.C.
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