Method for projection of a circuit pattern, which is...

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C430S005000, C382S144000, C716S030000, C716S030000

Reexamination Certificate

active

10917426

ABSTRACT:
A simulation is carried out of a projection based on an electronically stored circuit pattern and adjustable projection parameters and optical parameters which characterize the specific characteristics of a projection apparatus. Positions at which it is predicted that side lobes will occur in the event of an actual projection are identified in the calculated circuit pattern. The positions of the side lobes are transmitted to a manufacturing unit and are recorded in a measurement program. A wafer, which has been exposed by a mask, is inspected for side lobes, at least at precisely those transmitted positions using the measurement program. The adjustable projection parameters are adapted, a radiation-sensitive layer is removed from and reapplied to the wafer and the projection is repeated with the adapted projection parameters depending on the detection result. The control process is repeated until the side lobes have been completely prevented.

REFERENCES:
patent: 6291113 (2001-09-01), Spence
patent: 6329112 (2001-12-01), Fukuda et al.
patent: 6401236 (2002-06-01), Baggenstoss et al.
patent: 2002/0145719 (2002-10-01), Govil et al.
Olivier Toublan, et al., “Fully Automatic Side Lobes Detection and Correction Technique for Attenuated Phase Shift Masks”, Deep Submicron Technical Publication, Apr. 2001, 6 pages.

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